High Isolation Single-Pole Four-Throw RF MEMS Switch Based on Series-Shunt Configuration
نویسندگان
چکیده
منابع مشابه
High Isolation Single-Pole Four-Throw RF MEMS Switch Based on Series-Shunt Configuration
This paper presents a novel design of single-pole four-throw (SP4T) RF-MEMS switch employing both capacitive and ohmic switches. It is designed on high-resistivity silicon substrate and has a compact area of 1.06 mm(2). The series or ohmic switches have been designed to provide low insertion loss with good ohmic contact. The pull-in voltage for ohmic switches is calculated to be 7.19 V. Shunt o...
متن کاملA High Isolation Series-Shunt RF MEMS Switch
This paper presents a wide band compact high isolation microelectromechanical systems (MEMS) switch implemented on a coplanar waveguide (CPW) with three ohmic switch cells, which is based on the series-shunt switch design. The ohmic switch shows a low intrinsic loss of 0.1 dB and an isolation of 24.8 dB at 6 GHz. The measured average pull-in voltage is 28 V and switching time is 47 μs. In order...
متن کاملDesign and simulation of a RF MEMS shunt capacitive switch with low actuation voltage, low loss and high isolation
According to contact type, RF MEMS switches are generally classified into two categories: Capacitive switches and Metal-to-Metal ones. The capacitive switches are capable to tolerate a higher frequency range and more power than M-to-M switches. This paper presents a cantilever shunt capacitive RF MEMS switch with characteristics such as low trigger voltage, high capacitive ratio, short switchin...
متن کاملStudies on RF MEMS shunt switch
Radio Frequency Micro-Electro-Mechanical-Systems (RF MEMS) based switches are expected to play a key role in the field of microwave switching. Traits like low-loss performance; zero-power consumption and very low inter-modulation distortion have made these switches well suitable for high-performance microwave and millimeter-wave circuits. The design of RF MEMS switches, however, require sophist...
متن کاملSingle-pole-four-throw switch using high-aspect-ratio lateral switches
Introduction: Multi-throw switches are widely used in microwave circuits for switch matrices and true-time-delay phase shifting applications. Traditionally, the multi-throw switch uses GaAs MESFETs and pin diodes to perform its switching function. It exhibits good performances at low frequencies, but deteriorates in the high frequency range beyond 1 GHz [1]. On the other hand, the monolithic mi...
متن کاملذخیره در منابع من
با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید
ژورنال
عنوان ژورنال: The Scientific World Journal
سال: 2014
ISSN: 2356-6140,1537-744X
DOI: 10.1155/2014/605894